Atomistic modelling of laser excited Si crystal
Title: |
Atomistic modelling of laser excited Si crystal |
DNr: |
NAISS 2025/5-77 |
Project Type: |
NAISS Medium Compute |
Principal Investigator: |
Mattias Klintenberg <mattias@physics.uu.se> |
Affiliation: |
Uppsala universitet |
Duration: |
2025-02-25 – 2026-03-01 |
Classification: |
10304 |
Keywords: |
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Abstract
Recent advances in experimental capabilities has enabled us to study in detail how a
material responds to a laser excitation. This information can be used to verify the
validity of computational models and to exploit both the experimental as well as
modelling capabilities in industrial applications, such as additive manufacturing
and ion implantation. In our previous work we carried out a joint experimental
and modelling study, where the evolution of atomic vibrations in laser excited
tungsten was measured. The computer simulations with our developed electron-ion
coupling model agreed remarkably well with the experimental measurements,
thus validating the computational capability for similar types of studies in
tungsten material by other researchers and industry.
In this proposal we plan to carry out computational study of non-equilibrium
dynamics in laser excited Si crystal. First, we will develop and improve the
electron-ion coupling model for Si material based on available data in the
literature. Second, the model will be used to carry out molecular dynamics
simulations of laser excited silicon. The results of the simulations will be
compared to experimental data from our collaborators for model validation.
Both approaches generate an electron diffraction pattern of the physical process
which enables for a direct comparison. If necessary the discrepancies between the
experimental and modelling results will be addressed by modifying the model
or simulation parameters. Lastly, the results will be published in a combined
experimental-simulation paper(s).