Advancing semiconductor-based quantum sensing and quantum computing by predictive numerical simulations
Title: |
Advancing semiconductor-based quantum sensing and quantum computing by predictive numerical simulations |
DNr: |
NAISS 2024/23-46 |
Project Type: |
NAISS Small Storage |
Principal Investigator: |
Viktor Ivády <vikiv@ifm.liu.se> |
Affiliation: |
Linköpings Universitet, Eötvös Loránd University |
Duration: |
2024-02-01 – 2025-02-01 |
Classification: |
10304 |
Keywords: |
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Abstract
Semiconductor technologies made digital computation and information processing accessible for the society through an unprecedented pace of development. It is a plausible question today, whether a similar scenario could happen in the field of quantum computation and quantum information processing. In this project, we will elaborate on this topic and make important steps forward to provide a definite answer to this question. We will investigate the versatile quantum platform of point defect and quantum dot spin qubits in wide band gap semiconductors and make advances in the field of quantum sensing and quantum computing. In our investigations will exploit advanced computational methods far beyond the state-of-the-art. Calculating high-precision coupling parameters between spin qubits and their environment and utilizing efficient quantum dynamics simulations of medium-scale quantum systems, we will make quantitative prediction with unprecedented accuracy and reliability. We will demonstrate the viability of our approach via investigating realistic quantum systems and make advances otherwise not possible. In particular, we will make structural information easily accessible in atomic scale magnetic resonance measurement, describe and develop few-qubit quantum nodes, and propose scalable semiconductor quantum architectures for quantum computing.
Our numerical approach have already been used to explain experimental observations otherwise was not possible. [1,2]
References
[1] Coherent dynamics of multi-spin V_B^- center in hexagonal boron nitride
W Liu, V Ivády, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, NJ Guo, FF Yan, ...
Nature communications 13 (1), 1-8 (2022).
[2] Decoherence of V_B^- spin defects in monoisotopic hexagonal boron nitride
A Haykal, R Tanos, N Minotto, A Durand, F Fabre, J Li, JH Edgar, V Ivady, ...
Nature communications 13 (1), 1-7 (2022).