Zinc Blende type semiconductors
Title: Zinc Blende type semiconductors
SNIC Project: SNIC 2020/13-117
Project Type: SNIC Small Compute
Principal Investigator: Praveenkumar Hiremath <praveenkumar.hiremath@mek.lth.se>
Affiliation: Lunds universitet
Duration: 2021-01-01 – 2022-01-01
Classification: 10304
Keywords:

Abstract

This projects aims at studying zinc blende type semiconductors e.g. GaAs, InP. The focus will be on the electrical properties. It is known that the impurity centres such as DX centres (also referred to as Deep Donor levels) exhibit strong influence on the electrical properties of the host lattice. In this project the influence of DX centres on the conductivity of GaAs and InP will be investigated. This requires study of fermi levels, fermi velocity, density of states etc. To this end, different HPC centres including NSC (Tetralith) with small compute allocation will be used. Though the small compute allocation (5000 core hours/month) is not very much, by distributing the work on different cluster, hope to complete the project. Therefore, this is a request for 5000 core hours/month at NSC (Tetralith) centre. This project serves as a first step towards a potential bigger project focusing on the DX and DY centres in semiconductors. Therefore, I kindly request you to permit me to access the compute resources.