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Multiscale simulations on SiC-4H devices
Title: Multiscale simulations on SiC-4H devices
DNr: SNIC 2019/7-22
Project Type: SNIC Small Compute
Principal Investigator: Karim Elgammal <elgammal@kth.se>
Affiliation: Kungliga Tekniska högskolan
Duration: 2019-04-01 – 2020-04-01
Classification: 20206
Keywords:

Abstract

The purpose here is to perform both first-principle and device calculations on the power devices based on SiC-4H. The first-principle calculations involve density functional theory. The device calculations involve TCAD simulations calculating drift-diffusion models and solving poissons equations.