Magnetization dynamics for information technology applications
Title: Magnetization dynamics for information technology applications
SNIC Project: SNIC 2014/1-43
Project Type: SNAC Medium
Principal Investigator: Lars Bergqvist <lbergqv@kth.se>
Affiliation: KTH Royal Institute of Technology
Duration: 2014-03-01 – 2015-03-01
Classification: 10304 20599 10301
Homepage: http://www.e-science.se/project/atomistic-spin-dynamics
Keywords:

Abstract

The proposed research project is all about magnetism and its interactions with electronics (spintronics), spin waves (magnonics) or heat (spin caloritronics). These interactions can be employed to facilitate many interesting novel applications, in particular in information technology. Examples are new generation of memory devices, spin transfer torque magnetic random access memory (STT-MRAM) and race-track memory, which potentially are more energy efficient and better performing than the devices used today. Moreover, electromagnetic and/or thermal fields can be used to manipulate spin waves to create an entire new interesting class of materials, magnonic devices, for example transistors and diodes. The basic principle in many of the applications is to influence or control the orientation of magnetic moments with external sources that in turn affects the transport properties of the system. These magnetization dynamics processes will be studied in great detail using theoretical modeling using large-scale computations with a combination of first-principles calculations and atomistic spin dynamics simulations within our own developed UppASD software package. The developed theoretical framework is accurate but still fast enough to reach device length scales and has a well proven track record. Contrary to most other modeling efforts, we employ material specific studies that are able to give not only qualitative results but also quantitative results that can be compared and tested against experimental methods. The work is an interdisciplinary e-Science project connecting both core areas (visualization, numerical analysis and algorithmic developments) and applied areas (electronic structure and molecular simulations).